Low-power high-speed 1-V LSI using a 0.25-/spl mu/m MTCMOS/SIMOX technique

Abstract

A 1-V low-power high-speed circuit technique has been developed using a multi-threshold CMOS (MTCMOS) scheme with separation by implanted oxygen (SIMOX) SOI technology. The combination of MTCMOS and SIMOX results in 60%-faster operation and 80%-lower power consumption, compared to a conventional CMOS/bulk circuit. In order to reduce the power of not only the circuit but also the system, we propose an interface scheme that is compatible with conventional LSIs or transfers signal at high speed and low power. A standard-cell-based MPU was fabricated using 0.25-/spl mu/m MTCMOS/SIMOX. The maximum operating frequency is over 100 MHz and the energy consumption is 0.5 mW/MHz at the supply voltage of 1.0 V.