S. Steidl, S. Carlough, M. Ernest, A. Garg, R. Kraft, J. McDonald
{"title":"A 16 GHz fast RISC engine using GaAs/AlGaAs and SiGe HBT technology","authors":"S. Steidl, S. Carlough, M. Ernest, A. Garg, R. Kraft, J. McDonald","doi":"10.1109/ICISS.1997.630248","DOIUrl":null,"url":null,"abstract":"Wafer Scale Hybrid Packages (WSHPs) or MultiChip Modules (MCMs) have provided a breakthrough in system packaging for high clock rate systems. Based on this technology a 2 GHz Fast RISC demonstration integer-only computational engine has been designed, and is submitted for fabrication. This design involved use of Heterojunction Bipolar Transistors (HBTs) in the GaAs/AlGaAs materials system. This paper reviews some of the schemes used in that design and shows how there are actually several paths using advanced GaAs/AlGaAs and SiGe HBT technology to create similar systems that can actually run 8 times faster. Some of the challenges facing the architect and chip designer are discussed.","PeriodicalId":357602,"journal":{"name":"1997 Proceedings Second Annual IEEE International Conference on Innovative Systems in Silicon","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Proceedings Second Annual IEEE International Conference on Innovative Systems in Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISS.1997.630248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Wafer Scale Hybrid Packages (WSHPs) or MultiChip Modules (MCMs) have provided a breakthrough in system packaging for high clock rate systems. Based on this technology a 2 GHz Fast RISC demonstration integer-only computational engine has been designed, and is submitted for fabrication. This design involved use of Heterojunction Bipolar Transistors (HBTs) in the GaAs/AlGaAs materials system. This paper reviews some of the schemes used in that design and shows how there are actually several paths using advanced GaAs/AlGaAs and SiGe HBT technology to create similar systems that can actually run 8 times faster. Some of the challenges facing the architect and chip designer are discussed.
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