Charge Collection in Impact Ionization MOS Transistors

W. Wang
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Abstract

Single Event Upset is listed as one of the major challenges for further scaled devices by ITRS. For any newly proposed device, it is very important to study the potential robustness against single event upset. The charge collection is the fundamental parameter to determine the device radiation hardness. In this paper, 2-D device simulations were performed to study the charge collection in impact ionization MOS devices. The charge collection dependencies on high energy particle strike location as well as different bias conditions have been investigated. Unlike in conventional SOI CMOS device, little charge amplification effect was observed in this emerging new device.
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冲击电离MOS晶体管中的电荷收集
单事件干扰被ITRS列为进一步扩展设备的主要挑战之一。对于任何新提出的装置,研究其对单一事件扰动的潜在鲁棒性是非常重要的。电荷收集是决定器件辐射硬度的基本参数。本文对冲击电离MOS器件中的电荷收集进行了二维器件模拟研究。研究了高能粒子撞击位置和不同偏压条件对电荷收集的影响。与传统的SOI CMOS器件不同,这种新型器件的电荷放大效应很小。
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