Design of strain gauge structure

A. Husak, P. Kulha, J. Jakovenko, Z. Výborný
{"title":"Design of strain gauge structure","authors":"A. Husak, P. Kulha, J. Jakovenko, Z. Výborný","doi":"10.1109/ASDAM.2002.1088479","DOIUrl":null,"url":null,"abstract":"The paper describes the design of a strain gauge on a cantilever with implanted layers. In the paper, the physical model of implanted strain gauges is characterized and basic technological steps are described. Simulation using CoventorWare (MEMCAD) program is used to verify the mechanical properties and temperature distribution in cantilever structures. A suitable electric bridge connection of the structure for evaluation of electric parameters of strain gauges at mechanic deformation and different temperatures has been designed. On realized structures, basic parameters have been measured such as the dependence of electric parameters of strain gauges on mechanical deformation, temperature dependence at different mechanical load, temperature stability of output parameters, and temperature dependence of pn junctions in the structure. From the measured data, piezoresistive coefficients of deformation sensitivity, linearity, hysteresis, temperature coefficients of resistance, etc. have been calculated. The measured characteristics show very good linearity, small hysteresis and very good sensitivity.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

The paper describes the design of a strain gauge on a cantilever with implanted layers. In the paper, the physical model of implanted strain gauges is characterized and basic technological steps are described. Simulation using CoventorWare (MEMCAD) program is used to verify the mechanical properties and temperature distribution in cantilever structures. A suitable electric bridge connection of the structure for evaluation of electric parameters of strain gauges at mechanic deformation and different temperatures has been designed. On realized structures, basic parameters have been measured such as the dependence of electric parameters of strain gauges on mechanical deformation, temperature dependence at different mechanical load, temperature stability of output parameters, and temperature dependence of pn junctions in the structure. From the measured data, piezoresistive coefficients of deformation sensitivity, linearity, hysteresis, temperature coefficients of resistance, etc. have been calculated. The measured characteristics show very good linearity, small hysteresis and very good sensitivity.
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应变片结构设计
本文介绍了一种基于植入层的悬臂梁应变计的设计。本文描述了植入式应变片的物理模型,介绍了植入式应变片的基本工艺步骤。采用MEMCAD软件仿真验证了悬臂结构的力学性能和温度分布。设计了一种适用于应变片在机械变形和不同温度下电参数评估的结构电桥连接方式。在实现的结构上,测量了基本参数,如应变片的电参数对机械变形的依赖关系、不同机械载荷下的温度依赖关系、输出参数的温度稳定性以及结构中pn结的温度依赖关系。根据实测数据,计算出了变形灵敏度、线性度、滞回率、电阻温度系数等压阻系数。测量特性显示出良好的线性、小的滞后和良好的灵敏度。
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