A 120 GHz SiGe BiCMOS Monostatic Transceiver for Radar Applications

Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler
{"title":"A 120 GHz SiGe BiCMOS Monostatic Transceiver for Radar Applications","authors":"Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler","doi":"10.23919/EUMIC.2018.8539874","DOIUrl":null,"url":null,"abstract":"This paper focuses on the design and measurement results of a 120 GHz monostatic transceiver system for FMCW radar applications. The fully integrated chip is fabricated using 0.13 μm SiGe BiCMOS technology with fT/fmax of 250/340 GHz and occupies only an area of 1.33×0.73mm2, With a current consumption of 270 mA from a 3.3 V single supply, this fully differential transceiver is composed of an I/Q receiver, which has 11.8 dB of conversion gain and −16.6 dBm of input referred P1dB, and a transmitter with 2.6 dBm saturated output power having a 4-bit push-push type VCO integrated to a divide-by-32 block. Furthermore, TX and RX channels are isolated with a very compact front coupler so that the monostatic operation is possible with a single antenna input. As a built-in-self-test block, the transmitted power on transmitter chain is monitored through a two stage power detector by a branch-line-coupler. With the help of a small sized 3×3 cm2 HDPE lens and a compact antenna, the proposed fully integrated monostatic transceiver could detect obstacles above 100 m and proves its suitability for ISM band 120 GHz FMCW radar applications.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539874","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

This paper focuses on the design and measurement results of a 120 GHz monostatic transceiver system for FMCW radar applications. The fully integrated chip is fabricated using 0.13 μm SiGe BiCMOS technology with fT/fmax of 250/340 GHz and occupies only an area of 1.33×0.73mm2, With a current consumption of 270 mA from a 3.3 V single supply, this fully differential transceiver is composed of an I/Q receiver, which has 11.8 dB of conversion gain and −16.6 dBm of input referred P1dB, and a transmitter with 2.6 dBm saturated output power having a 4-bit push-push type VCO integrated to a divide-by-32 block. Furthermore, TX and RX channels are isolated with a very compact front coupler so that the monostatic operation is possible with a single antenna input. As a built-in-self-test block, the transmitted power on transmitter chain is monitored through a two stage power detector by a branch-line-coupler. With the help of a small sized 3×3 cm2 HDPE lens and a compact antenna, the proposed fully integrated monostatic transceiver could detect obstacles above 100 m and proves its suitability for ISM band 120 GHz FMCW radar applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于雷达应用的120 GHz SiGe BiCMOS单站收发器
本文重点介绍了一种用于FMCW雷达的120 GHz单站收发系统的设计和测试结果。完全集成芯片是用0.13μm锗硅BiCMOS技术制作的《金融时报》/ fmax 250/340 GHz和只占面积1.33×0.73平方毫米,270毫安的电流消耗从3.3 V单供应,这充分微分收发器是由I / Q接收机,转换11.8 dB的增益和−16.6 dBm的输入P1dB,发射机,2.6 dBm饱和输出功率有4比特推广推广类型集成VCO divide-by-32块。此外,TX和RX通道通过非常紧凑的前耦合器隔离,因此可以使用单个天线输入进行单稳态操作。作为内置自检模块,发射链上的发射功率通过分支线耦合器的二级功率检测器进行监测。利用3×3 cm2的小尺寸HDPE透镜和紧凑的天线,所提出的全集成单站收发器可以探测到100米以上的障碍物,并证明了其适用于ISM频段120 GHz FMCW雷达应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Multipurpose 76 GHz Radar Transceiver System for Automotive Applications Based on SiGe MMICs X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications 110–135 GHz SiGe BiCMOS Frequency Quadrupler Based on a Single Gilbert Cell Robust X-band GaN LNA with Integrated Active Limiter Optimization of PCB Transitions for Vertical Solderless Coaxial Connectors up to 67 GHz
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1