Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate

Abstract

Growth and optimization of AlGaN/GaN transistors on Si substrate is an important subject of investigation to surpass the cost effective substrates like GaN, SiC and sapphire. In the ongoing study of GaN devices on Si, we have achieved record high room temperature mobility (μRT) of 3215 cm2/Vs for AlGaN/GaN HEMTs grown by MOCVD. Our approach to increase the mobility involves (i) reducing dislocation density by using thick buffer on Si and (ii) using 1.5 nm AlN spacer. This is the highest μRT so far reported for AlGaN/GaN grown on GaN, SiC and sapphire substrates. The growth and device characteristics of these HEMTs which have high mobility are presented in this report.