T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin
{"title":"High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications","authors":"T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin","doi":"10.1109/CSICS07.2007.10","DOIUrl":null,"url":null,"abstract":"The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.10","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
