M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura
{"title":"Wide energy level control of InAs QDs using doublecapping procedure by MOVPE","authors":"M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura","doi":"10.1109/ICIPRM.2013.6562585","DOIUrl":null,"url":null,"abstract":"We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.
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