Emerging Memory Modeling Challenges (Invited Paper)

A. Ghetti, A. Benvenuti, A. Mauri, Haitao Liu, C. Mouli
{"title":"Emerging Memory Modeling Challenges (Invited Paper)","authors":"A. Ghetti, A. Benvenuti, A. Mauri, Haitao Liu, C. Mouli","doi":"10.1109/SISPAD.2018.8551635","DOIUrl":null,"url":null,"abstract":"Emerging Memory (EM) is a broad class of memory devices leveraging a wide spectrum of physical phenomena and/or material properties, that go beyond the charge storage concept of more conventional NAND and DRAM technologies. Availability of physical models and simulation tools to understand their behavior, predict performance, engineer materials and cell architecture would be extremely useful for their successful development. However, such tools are not always available because of the diversity and complexity of the physical mechanisms. This paper would like to review the main trends of the on-going modeling and simulation activities in the field of EM, trying to point out what are the needs and challenges for the future.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Emerging Memory (EM) is a broad class of memory devices leveraging a wide spectrum of physical phenomena and/or material properties, that go beyond the charge storage concept of more conventional NAND and DRAM technologies. Availability of physical models and simulation tools to understand their behavior, predict performance, engineer materials and cell architecture would be extremely useful for their successful development. However, such tools are not always available because of the diversity and complexity of the physical mechanisms. This paper would like to review the main trends of the on-going modeling and simulation activities in the field of EM, trying to point out what are the needs and challenges for the future.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
新出现的内存建模挑战(特邀论文)
新兴存储器(EM)是一类广泛的存储设备,利用广泛的物理现象和/或材料特性,超越了更传统的NAND和DRAM技术的电荷存储概念。可用的物理模型和仿真工具来了解它们的行为,预测性能,工程材料和细胞结构将对它们的成功开发非常有用。然而,由于物理机制的多样性和复杂性,这些工具并不总是可用的。本文将回顾当前EM领域建模和仿真活动的主要趋势,并试图指出未来的需求和挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to}Circuit A versatile harmonic balance method in a parallel framework Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1