Heteroepitaxy of InP on Si for photonic and photovoltaic applications

Abstract

Summary for only given. We present epitaxial lateral overgrowth method (ELOG) as a means of achieving good quality III-V materials on silicon (Si). In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In the corrugated epitaxial lateral overgrowth (CELOG) technique recently developed in our laboratory, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We demonstrate the realization of multi-quantum wells grown on ELOG InP/Si that have near laser emission at 1.55 μm as well as the templates of InP frusta on Si with good optical quality for further quantum dot growth by combining nanoimprinting and ELOG. We indicate viable routes for realizing III-V/Si heterojunction solar cells especially by CELOG and also truly monolithic photonic integration on silicon by both CELOG and ELOG methods.