Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation

Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176 Pub Date : 1998-01-25 DOI:10.1109/MEMSYS.1998.659818

Kazuo Sato, M. Shikida, T. Yamashiro, K. Asaumi, Y. Iriye, M. Yamamoto

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引用次数: 168

Abstract

We evaluated orientation dependence in the etching rate of single-crystal silicon for tetramethylammonium-hydroxide (TMAH) water solutions. Etching rates for a number of crystallographic orientations were measured for a wide range of etching conditions, including TMAH concentrations of 10 to 25% and temperatures of 70 to 90/spl deg/C. We found significantly different characteristics from those for KOH water solutions. Firstly, different types of orientation dependence in etching rate were found around (111) between TMAH and KOH. This means the bonding energy of the silicon crystal lattice is not a single factor that dominates orientation dependence, and there exist different etching mechanisms for the two etchants. Secondly, effects of the circulation of etchants on the etching rates were not negligible in TMAH in contrast to KOH system.

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单晶硅在TMAH水溶液中的各向异性刻蚀速率与晶体取向的关系

我们评估了单晶硅在四甲基氢氧化铵(TMAH)水溶液中蚀刻速率的取向依赖性。在广泛的蚀刻条件下，包括TMAH浓度为10 - 25%和温度为70 - 90/spl℃，测量了许多晶体取向的蚀刻速率。我们发现了与KOH水溶液显著不同的特征。首先，TMAH和KOH在(111)附近发现了不同类型的蚀刻速率取向依赖关系。这意味着硅晶格的键能不是决定取向依赖的单一因素，两种蚀刻剂存在不同的蚀刻机制。其次，与KOH体系相比，TMAH体系中蚀刻剂循环对蚀刻速率的影响不容忽视。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176

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