Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176最新文献
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659724
L. Fan, R.T. Chen, A. Nespola, M. Wu
We propose a universal MEMS technology platform for fabricating integrable passive components for radio frequency (RF) integrated circuits. This platform is based on a novel surface-micromachined Micro-Elevator by Self-Assembly (MESA) technique. Both high-Q inductors and variable capacitors can be realized by the MESA technology. A surface-micromachined spiral inductor that is raised by 250 /spl mu/m above the Si substrate has been experimentally demonstrated. The suspended inductor has less parasitic capacitance and substrate loss, and higher quality (Q) value and resonant frequency. The inductance of a 12.5-turn inductor is measured to be 24 nH. The results show that the self-assembled passive RF elements are suitable for monolithic integration.
{"title":"Universal MEMS platforms for passive RF components: suspended inductors and variable capacitors","authors":"L. Fan, R.T. Chen, A. Nespola, M. Wu","doi":"10.1109/MEMSYS.1998.659724","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659724","url":null,"abstract":"We propose a universal MEMS technology platform for fabricating integrable passive components for radio frequency (RF) integrated circuits. This platform is based on a novel surface-micromachined Micro-Elevator by Self-Assembly (MESA) technique. Both high-Q inductors and variable capacitors can be realized by the MESA technology. A surface-micromachined spiral inductor that is raised by 250 /spl mu/m above the Si substrate has been experimentally demonstrated. The suspended inductor has less parasitic capacitance and substrate loss, and higher quality (Q) value and resonant frequency. The inductance of a 12.5-turn inductor is measured to be 24 nH. The results show that the self-assembled passive RF elements are suitable for monolithic integration.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127184495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659784
J. Kaienburg, M. Lutz, B. Maihofer, R. Schellin
A new surface micromachined silicon sensor for highly accurate angle detection is presented. The principle of transduction is based on the Lorentz force in combination with a differential capacitance sensing technique. The transducer may also serve as a reliable position and magnetic field sensor. In contrast to other angle detection sensors, this sensor is completely based on surface micromachining technology. The fabrication of the transducer is therefore fully compatible to the fabrication of other surface micromachined sensors, like accelerometers, yaw rate sensors, etc. This is a very important feature regarding mass production, specially in the automotive industry.
{"title":"A precise and contactless angle detection sensor using surface micromachining technology","authors":"J. Kaienburg, M. Lutz, B. Maihofer, R. Schellin","doi":"10.1109/MEMSYS.1998.659784","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659784","url":null,"abstract":"A new surface micromachined silicon sensor for highly accurate angle detection is presented. The principle of transduction is based on the Lorentz force in combination with a differential capacitance sensing technique. The transducer may also serve as a reliable position and magnetic field sensor. In contrast to other angle detection sensors, this sensor is completely based on surface micromachining technology. The fabrication of the transducer is therefore fully compatible to the fabrication of other surface micromachined sensors, like accelerometers, yaw rate sensors, etc. This is a very important feature regarding mass production, specially in the automotive industry.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115182123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659761
T. Muller, T. Feichtinger, G. Breitenbach, M. Brandl, O. Brand, H. Baltes
A new fabrication technology for CMOS-MEMS devices has been developed. It is based on a commercial CMOS process and a single anisotropic etching step with electrochemical etch stop. A process sequence providing contacts for the etching potentials to the wafers and a preparation sequence for the wafer back were implemented into the CMOS process. A new electrical connection concept for the p-type silicon to be removed by the anisotropic etchant is presented. P-well based substrate contacts allow the production of arbitrarily shaped silicon n-well structures. Especially structures with narrow gaps between n-wells or n-well structures enclosing p-type substrate regions can be completely released. Furthermore n-well silicon membranes of different thicknesses for, e.g., pressure sensor applications are producible by the technology. To demonstrate the potential of this technique, complex shaped, decoupled torsional oscillators were fabricated. The devices were characterized by investigating their vibrational modes. Mechanical quality factors of more then 27000 were observed.
{"title":"Industrial fabrication method for arbitrarily shaped silicon N-well micromechanical structures","authors":"T. Muller, T. Feichtinger, G. Breitenbach, M. Brandl, O. Brand, H. Baltes","doi":"10.1109/MEMSYS.1998.659761","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659761","url":null,"abstract":"A new fabrication technology for CMOS-MEMS devices has been developed. It is based on a commercial CMOS process and a single anisotropic etching step with electrochemical etch stop. A process sequence providing contacts for the etching potentials to the wafers and a preparation sequence for the wafer back were implemented into the CMOS process. A new electrical connection concept for the p-type silicon to be removed by the anisotropic etchant is presented. P-well based substrate contacts allow the production of arbitrarily shaped silicon n-well structures. Especially structures with narrow gaps between n-wells or n-well structures enclosing p-type substrate regions can be completely released. Furthermore n-well silicon membranes of different thicknesses for, e.g., pressure sensor applications are producible by the technology. To demonstrate the potential of this technique, complex shaped, decoupled torsional oscillators were fabricated. The devices were characterized by investigating their vibrational modes. Mechanical quality factors of more then 27000 were observed.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122632523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659757
B. Eyre, J. Blosiu, D. Wiberg
Using the Taguchi technique an optimization experiment was performed to characterize the processing of Epon SU-8 negative photoresist. This photoresist has proven to be very sensitive to process variations and difficult to use. The Taguchi method reveals output sensitivity to variations in control factors. Using five processing parameters as control factors, experiments were performed and results were evaluated by comparison to ideal output characteristics. Analyzing the results, a proposed fabrication process was derived from optimizing the control factors for the best overall mean across all the outputs. The experiment was repeated for three film thicknesses: 50 /spl mu/m, 100 /spl mu/m,and 220 /spl mu/m. The desired output characteristics were straight sidewall profile, fine line and space resolution, and adhesion to substrate. Tables show optimized processing parameters for these three film thicknesses.
{"title":"Taguchi optimization for the processing of Epon SU-8 resist","authors":"B. Eyre, J. Blosiu, D. Wiberg","doi":"10.1109/MEMSYS.1998.659757","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659757","url":null,"abstract":"Using the Taguchi technique an optimization experiment was performed to characterize the processing of Epon SU-8 negative photoresist. This photoresist has proven to be very sensitive to process variations and difficult to use. The Taguchi method reveals output sensitivity to variations in control factors. Using five processing parameters as control factors, experiments were performed and results were evaluated by comparison to ideal output characteristics. Analyzing the results, a proposed fabrication process was derived from optimizing the control factors for the best overall mean across all the outputs. The experiment was repeated for three film thicknesses: 50 /spl mu/m, 100 /spl mu/m,and 220 /spl mu/m. The desired output characteristics were straight sidewall profile, fine line and space resolution, and adhesion to substrate. Tables show optimized processing parameters for these three film thicknesses.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114436282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659721
B. Chui, H. J. Mamin, B. Terris, D. Rugar, T. Kenny
We have developed a novel technique for fabricating high-aspect-ratio sidewall-implanted microstructures, and have used it to fabricate a dual-axis piezoresistive cantilever for atomic force microscope (AFM) data storage. The device allows simultaneous, independent detection of vertical and lateral forces without complex signal-separation circuitry. The vertical force sensor of the cantilever can be used for data readback and load servo, while the lateral force sensor can be used for data groove edge detection and track servo. The dual-axis cantilever consists of a flat, triangular probe with a sharp tip, connected to the support by four parallel high-aspect-ratio ribs. Piezoresistors are fabricated on the horizontal surface of the triangular probe and the vertical sidewalls of the ribs for orthogonal deflection sensing. A special oblique ion implant at approximately 45/spl deg/ to the normal is used to form the piezoresistors. Groove tracking on a spinning disk has been demonstrated using a custom servo controller for load and track servo.
{"title":"Sidewall-implanted dual-axis piezoresistive cantilever for AFM data storage readback and tracking","authors":"B. Chui, H. J. Mamin, B. Terris, D. Rugar, T. Kenny","doi":"10.1109/MEMSYS.1998.659721","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659721","url":null,"abstract":"We have developed a novel technique for fabricating high-aspect-ratio sidewall-implanted microstructures, and have used it to fabricate a dual-axis piezoresistive cantilever for atomic force microscope (AFM) data storage. The device allows simultaneous, independent detection of vertical and lateral forces without complex signal-separation circuitry. The vertical force sensor of the cantilever can be used for data readback and load servo, while the lateral force sensor can be used for data groove edge detection and track servo. The dual-axis cantilever consists of a flat, triangular probe with a sharp tip, connected to the support by four parallel high-aspect-ratio ribs. Piezoresistors are fabricated on the horizontal surface of the triangular probe and the vertical sidewalls of the ribs for orthogonal deflection sensing. A special oblique ion implant at approximately 45/spl deg/ to the normal is used to form the piezoresistors. Groove tracking on a spinning disk has been demonstrated using a custom servo controller for load and track servo.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130335461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659726
S. Messner, M. Muller, V. Burger, J. Schaible, H. Sandmaier, R. Zengerle
A new normally-closed 3-way microvalve for pneumatic applications is presented for the first time. The valve is driven by a bimetallic actuation principle. This paper discusses the dimensioning and design, the fabrication and the experimental results of the 3-way valve. The valve is designed to control differential pressures of 1000 kPa. Flow rates up to 800 ml/min for dry air at 600 kPa can be achieved. The power consumption is about 1 W. The valve has been tested successfully in an ambient temperature range from 0 to 50/spl deg/C.
{"title":"A normally-closed, bimetallically actuated 3-way microvalve for pneumatic applications","authors":"S. Messner, M. Muller, V. Burger, J. Schaible, H. Sandmaier, R. Zengerle","doi":"10.1109/MEMSYS.1998.659726","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659726","url":null,"abstract":"A new normally-closed 3-way microvalve for pneumatic applications is presented for the first time. The valve is driven by a bimetallic actuation principle. This paper discusses the dimensioning and design, the fabrication and the experimental results of the 3-way valve. The valve is designed to control differential pressures of 1000 kPa. Flow rates up to 800 ml/min for dry air at 600 kPa can be achieved. The power consumption is about 1 W. The valve has been tested successfully in an ambient temperature range from 0 to 50/spl deg/C.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123940911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659831
E. Kruglick, B. Warneke, K. Pister
Design, fabrication, and testing of multi-axis CMOS piezoresistive accelerometers is described. Vertical axis accelerometers have been fabricated in multiple processes using a production tested maskless bulk etch step. Horizontal axis accelerometers have also been fabricated and require an additional assembly step. Acceleration sensing in based on the piezoresistive behavior of the gate polysilicon in standard CMOS. Integrated amplifiers were designed and built on chip and have been characterized. Characterization is also presented for sensitivity, angular response, frequency response, axis of maximum sensitivity, temperature coefficient of offset, and temperature coefficient of sensitivity. Results are presented for a single chip with integrated full three axis acceleration sensing.
{"title":"CMOS 3-axis accelerometers with integrated amplifier","authors":"E. Kruglick, B. Warneke, K. Pister","doi":"10.1109/MEMSYS.1998.659831","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659831","url":null,"abstract":"Design, fabrication, and testing of multi-axis CMOS piezoresistive accelerometers is described. Vertical axis accelerometers have been fabricated in multiple processes using a production tested maskless bulk etch step. Horizontal axis accelerometers have also been fabricated and require an additional assembly step. Acceleration sensing in based on the piezoresistive behavior of the gate polysilicon in standard CMOS. Integrated amplifiers were designed and built on chip and have been characterized. Characterization is also presented for sensitivity, angular response, frequency response, axis of maximum sensitivity, temperature coefficient of offset, and temperature coefficient of sensitivity. Results are presented for a single chip with integrated full three axis acceleration sensing.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127923591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659781
M. Ashauer, H. Glosch, F. Hedrich, N. Hey, H. Sandmaier, W. Lang
A new type of a flow sensor is presented which is based on a thermal principle. The combination of two detecting methods results both in a considerable increase in measuring range (0.1 to 150 mm/s) and in a shorter reaction time of less than 2 ms. Furthermore, the sensor is furthermore relatively insensitive to pollution. Devices were manufactured and successfully tested for liquids and gases.
{"title":"Thermal flow sensor for liquids and gases","authors":"M. Ashauer, H. Glosch, F. Hedrich, N. Hey, H. Sandmaier, W. Lang","doi":"10.1109/MEMSYS.1998.659781","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659781","url":null,"abstract":"A new type of a flow sensor is presented which is based on a thermal principle. The combination of two detecting methods results both in a considerable increase in measuring range (0.1 to 150 mm/s) and in a shorter reaction time of less than 2 ms. Furthermore, the sensor is furthermore relatively insensitive to pollution. Devices were manufactured and successfully tested for liquids and gases.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132264630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659798
Sang-Wook Lee, H. Yowanto, Y. Tai
A new micromachined cell lysis device is developed. It is designed for miniature bio-analysis systems where cell lysing is needed to obtain intracellular materials for further analysis such as DNA identification. It consists of multi-electrode pairs to apply electric fields to cells. We adopt the means of using electric field lysing because it call greatly simplify purification steps for preparation of biological samples, when compared to conventional chemical methods. Yeast, Chinese cabbage, radish cells and E. Coli are tested with the device. The lysis of yeast, Chinese cabbage, radish cells is observed by a microscope. The experimental observation suggests E. Coli are also lysed by the pulsed electric field. The range of electric field for the lysis is on the order of 1 kV/cm to 10 kV/cm. In addition, for practical reasons, we reduce the voltage required for lysing to less than 10 V by making the electrode gap on the order of microns.
{"title":"A micro cell lysis device","authors":"Sang-Wook Lee, H. Yowanto, Y. Tai","doi":"10.1109/MEMSYS.1998.659798","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659798","url":null,"abstract":"A new micromachined cell lysis device is developed. It is designed for miniature bio-analysis systems where cell lysing is needed to obtain intracellular materials for further analysis such as DNA identification. It consists of multi-electrode pairs to apply electric fields to cells. We adopt the means of using electric field lysing because it call greatly simplify purification steps for preparation of biological samples, when compared to conventional chemical methods. Yeast, Chinese cabbage, radish cells and E. Coli are tested with the device. The lysis of yeast, Chinese cabbage, radish cells is observed by a microscope. The experimental observation suggests E. Coli are also lysed by the pulsed electric field. The range of electric field for the lysis is on the order of 1 kV/cm to 10 kV/cm. In addition, for practical reasons, we reduce the voltage required for lysing to less than 10 V by making the electrode gap on the order of microns.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132741989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659742
K. Ikuta, S. Maruo, Y. Fukaya, T. Fujisawa
The several type of biochemical IC chips with photo detective micro reactor has been developed. The real time monitoring and controlling cell free synthesis of protein was demonstrated successfully. The photo protein of firefly so called Luciferase was synthesized. The biochemical luminescence was monitored by built-in photo diode in the micro reactor to transfer reaction status into voltage signal. Feedback control synthetic reaction was verified experimentally. The results achieved here should be key technology for future DNA and RNA synthesis without biological cell.
{"title":"Biochemical IC chip toward cell free DNA protein synthesis","authors":"K. Ikuta, S. Maruo, Y. Fukaya, T. Fujisawa","doi":"10.1109/MEMSYS.1998.659742","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659742","url":null,"abstract":"The several type of biochemical IC chips with photo detective micro reactor has been developed. The real time monitoring and controlling cell free synthesis of protein was demonstrated successfully. The photo protein of firefly so called Luciferase was synthesized. The biochemical luminescence was monitored by built-in photo diode in the micro reactor to transfer reaction status into voltage signal. Feedback control synthetic reaction was verified experimentally. The results achieved here should be key technology for future DNA and RNA synthesis without biological cell.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115232375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176
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