{"title":"Preparation and electrical property of /spl beta/-PVDF/PbTiO/sub 3/ thin films","authors":"C. Wang, M. Kao, Y. Chen","doi":"10.1109/ISAF.2002.1195898","DOIUrl":null,"url":null,"abstract":"Ferroelectric polymer/ceramic structure thin films were fabricated on Pt/SiO/sub 2//Si substrates using a sol-gel method. The bilayer thin film was composed of polar /spl beta/-phase poly(vinylidene fluoride) (PVDF) and 1 /spl mu/m thickness of polycrystalline lead titanate (PbTiO/sub 3/) thin film. By changing the concentrations of PVDF solutions (0.6/spl sim/1.0 M), various thickness of PVDF thin films (50-580 nm) were obtained, and the effects of various processing parameters on the characteristics of PVDF/PbTiO/sub 3/ thin films were studied. The characteristic of the /spl beta/ phase at infrared spectrum of 511 and 840 cm/sup -1/ can be observed in PVDF film crystallized at 65/spl deg/C for 2 h. With the increase of the PVDF thickness of the PVDF/PbTiO/sub 3/ films, the relative dielectric constant (/spl epsi//sub r/) decreased from 63 to 20 and the leakage current density (J) also decreased from 1.54 /spl times/ 10/sup -6/ to 3.86 /spl times/ 10/sup -7/ A/cm/sup 2/.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Ferroelectric polymer/ceramic structure thin films were fabricated on Pt/SiO/sub 2//Si substrates using a sol-gel method. The bilayer thin film was composed of polar /spl beta/-phase poly(vinylidene fluoride) (PVDF) and 1 /spl mu/m thickness of polycrystalline lead titanate (PbTiO/sub 3/) thin film. By changing the concentrations of PVDF solutions (0.6/spl sim/1.0 M), various thickness of PVDF thin films (50-580 nm) were obtained, and the effects of various processing parameters on the characteristics of PVDF/PbTiO/sub 3/ thin films were studied. The characteristic of the /spl beta/ phase at infrared spectrum of 511 and 840 cm/sup -1/ can be observed in PVDF film crystallized at 65/spl deg/C for 2 h. With the increase of the PVDF thickness of the PVDF/PbTiO/sub 3/ films, the relative dielectric constant (/spl epsi//sub r/) decreased from 63 to 20 and the leakage current density (J) also decreased from 1.54 /spl times/ 10/sup -6/ to 3.86 /spl times/ 10/sup -7/ A/cm/sup 2/.
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