K. Kawaguchi, T. Takahashi, N. Okamoto, M. Sato, M. Suhara
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引用次数: 2
Abstract
Type-II GaAsSb/InAs nanowires (NWs) were grown using a position-controlled vapor-liquid-solid method. A change in shape of GaAsSb segments with Sb content was revealed. By controlling the group-V sources, GaAsSb segments that satisfied the criteria of tunnel junctions were achieved, and p-type Zn doping for GaAsSb segments was confirmed in the range of $10^{18}-10^{19} \text{cm}^{-3}$. Moreover, conductive type of p-n NWs was confirmed using the scanning capacitance microscopy technique. These results are promising for the development of NWs suitable for vertical nanoscale tunnel devices.
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