Sang-Hoon Hong, Si-Hong Kim, Se Jun Kim, J. Wee, Jin-Yong Chung
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引用次数: 5
Abstract
Offset-cancellation provides low-voltage DRAM operation. The offset cancelling bit-line sense amplifiers are pitch-matched to the conventional 0.16 /spl mu/m DRAM cell array without process modifications. Results indicate better refresh characteristics than conventional bit-line sense amplifiers even at 1.5 V.
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