{"title":"N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess","authors":"S. Kolluri, S. Keller, S. Denbaars, U. Mishra","doi":"10.1109/DRC.2011.5994504","DOIUrl":null,"url":null,"abstract":"This paper presents the X-band and C-band power performance of MOCVD grown N-polar AlGaN/GaN MIS-HEMTs grown on semi-insulating SiC substrates. Additionally, an Al2O3 based etch stop technology was demonstrated for improving the manufacturability of N-polar GaN HEMTs with SixNy passivation. The reported output power densities of 16.7 W/mm at 10 GHz and 20.7 W/mm at 4 GHz represent the highest reported values so far for an N-polar device, at both of these frequencies.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents the X-band and C-band power performance of MOCVD grown N-polar AlGaN/GaN MIS-HEMTs grown on semi-insulating SiC substrates. Additionally, an Al2O3 based etch stop technology was demonstrated for improving the manufacturability of N-polar GaN HEMTs with SixNy passivation. The reported output power densities of 16.7 W/mm at 10 GHz and 20.7 W/mm at 4 GHz represent the highest reported values so far for an N-polar device, at both of these frequencies.