T. Mizuno, M. Takeya, S. Ikeda, T. Fujimoto, Y. Ohfuji, K. Oikawa, M. Taniguchi, H. Ichinokura, T. Hashizu, M. Ikeda
{"title":"High-power blue-violet laser diodes on GaN substrates","authors":"T. Mizuno, M. Takeya, S. Ikeda, T. Fujimoto, Y. Ohfuji, K. Oikawa, M. Taniguchi, H. Ichinokura, T. Hashizu, M. Ikeda","doi":"10.1109/ISLC.2004.1382756","DOIUrl":null,"url":null,"abstract":"We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed in producing BV-LDs with a kink-free output power of more than 150 mW. The threshold current was 35.4 mA at 25/spl deg/C. The operating current and voltage were 65.8 mW and 4.66 V, respectively, under 45 mW CW operation at 25/spl deg/C. Their characteristics came close to surpassing the best characteristics of BV-LDs grown on ELO-GaN/sapphire, demonstrating that practical BV-LDs suitable for next-generation blu-ray disc system can be produced on GaN substrates.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed in producing BV-LDs with a kink-free output power of more than 150 mW. The threshold current was 35.4 mA at 25/spl deg/C. The operating current and voltage were 65.8 mW and 4.66 V, respectively, under 45 mW CW operation at 25/spl deg/C. Their characteristics came close to surpassing the best characteristics of BV-LDs grown on ELO-GaN/sapphire, demonstrating that practical BV-LDs suitable for next-generation blu-ray disc system can be produced on GaN substrates.
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