Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block
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引用次数: 3
Abstract
Accelerated temperature lifetesting at Tchannel of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×108 hours at Tchannel of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.
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