{"title":"1/f Noise analysis of Hafnium Oxide based ReRAM devices using ac + dc measurement technique","authors":"N. Mahmud, Avyaya J. Narasimham, J. Lloyd","doi":"10.1109/IIRW.2016.7904906","DOIUrl":null,"url":null,"abstract":"1/f Noise levels in Hafnium Oxide based bipolar ReRAM devices are studied using an ac + dc measurement technique. Preliminary results support the idea that the current conducts through a low resistive metal rich filament at low resistance state (LRS) and the current at high resistance state (HRS) is a trap-assisted current. The technique used here, allows to estimate the noise levels around 1 Hz.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
1/f Noise levels in Hafnium Oxide based bipolar ReRAM devices are studied using an ac + dc measurement technique. Preliminary results support the idea that the current conducts through a low resistive metal rich filament at low resistance state (LRS) and the current at high resistance state (HRS) is a trap-assisted current. The technique used here, allows to estimate the noise levels around 1 Hz.
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