N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin
{"title":"Charge properties of MIS structures Ni-Dy/sub x/O/sub y/-n-Si [100]","authors":"N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin","doi":"10.1109/ASDAM.2002.1088477","DOIUrl":null,"url":null,"abstract":"The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.
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