{"title":"An improved Kahn transmitter architecture based on delta-sigma modulation","authors":"Y. Wang","doi":"10.1109/MWSYM.2003.1212615","DOIUrl":null,"url":null,"abstract":"A new architecture for linear high efficiency power amplifiers and transmitters is proposed. The essential idea is to apply delta-sigma modulation to the signal envelopes in the Kahn transmitters. While in traditional Kahn techniques the original signal envelope is restored before the final-stage power amplifier is modulated, in the proposed scheme, the power amplifier undergoes digital modulations and the signal envelope is restored from passing through a high Q bandpass filter at the output. Simulations based on power GaAs FET models show 31% improvements on power efficiency and 5 dB improvement in IM3 compared to traditional Kahn techniques.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"97","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1212615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 97
Abstract
A new architecture for linear high efficiency power amplifiers and transmitters is proposed. The essential idea is to apply delta-sigma modulation to the signal envelopes in the Kahn transmitters. While in traditional Kahn techniques the original signal envelope is restored before the final-stage power amplifier is modulated, in the proposed scheme, the power amplifier undergoes digital modulations and the signal envelope is restored from passing through a high Q bandpass filter at the output. Simulations based on power GaAs FET models show 31% improvements on power efficiency and 5 dB improvement in IM3 compared to traditional Kahn techniques.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
