A. Maconi, A. Arreghini, C. M. Compagnoni, G. Van den bosch, A. Spinelli, J. van Houdt, A. Lacaita
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引用次数: 20
Abstract
This paper investigates the impact of lateral charge migration on the retention performance of charge-trap memories whose storage layer is not patterned self-aligned with the channel area of each cell. Experimental results on planar SONOS devices, revealing an important contribution of lateral charge migration at 150 °C, are used to calibrate a new numerical model accounting for both the vertical and the lateral charge loss from the silicon nitride. Modeling results allow a detailed analysis of the retention transients of both planar and 3D SONOS arrays, evaluating, for the latter, the minimum dimensions needed to fulfill the retention requirements at 85 °C.
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