A cost-efficient dynamic Ternary CAM in 130 nm CMOS technology with planar complementary capacitors and TSR architecture

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221168

H. Noda, K. Inoue, H. Mattausch, T. Koide, K. Arimoto

引用次数: 12

Abstract

A novel dynamic Ternary-CAM (TCAM) architecture with transparently scheduled refresh, address-input-free writing and planar complementary capacitors is proposed. The planar dynamic concept allows small TCAM cell size of 4.79 /spl mu/m/sup 2/ in a 130 nm CMOS technology that is about half of the static TCAM cell size, and the complementary capacitors improve the stability of conventional-DRAM-based TCAM cells. Transparently scheduled refresh and address-input-free writing make the proposed TCAM especially attractive for classifying applications in network routers.

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采用平面互补电容器和TSR结构的130纳米CMOS技术的低成本动态三元CAM

提出了一种具有透明定时刷新、无地址输入写入和平面互补电容的动态三元凸轮(TCAM)结构。平面动态概念允许在130 nm CMOS技术中实现4.79 /spl mu/m/sup 2/的小TCAM电池尺寸，约为静态TCAM电池尺寸的一半，并且互补电容器提高了传统基于dram的TCAM电池的稳定性。透明的定时刷新和免地址输入写入使得所提出的TCAM对网络路由器中的应用分类特别有吸引力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

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