Experimental investigation of noise sources in silicon carbide Schottky barriers

Abstract

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general properties of these devices such as barrier height and doping level, extracted from varying temperature measurements. The 1/f low frequency noise closely follows a model proposed by Kleinpenning (1979) and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier.