N. Akhavan, G. Jolley, G. U. Membreno, J. Antoszewski, L. Faraone
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引用次数: 6
Abstract
In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.
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