{"title":"Schottky barrier photodiodes in Hg1-xCdxTe","authors":"D. Polla, A. K. Sood","doi":"10.1063/1.328363","DOIUrl":null,"url":null,"abstract":"Schottky Barrier photodiodes have been fabricated on p-Hg<inf>1-x</inf>Cd<inf>x</inf>Te (0.20≤ × ≤ 0.38) with aluminum, chromium, lead and manganese as barrier metals. Various electrical characterizations have been carried out to determine barrier heights and the results are found to be in excellent agreement with theory. These photodiodes have also been used to determine the minority carrier lifetime and diffusion length in p-Hg<inf>1-x</inf>Cd<inf>x</inf>Te.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.328363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
Schottky Barrier photodiodes have been fabricated on p-Hg1-xCdxTe (0.20≤ × ≤ 0.38) with aluminum, chromium, lead and manganese as barrier metals. Various electrical characterizations have been carried out to determine barrier heights and the results are found to be in excellent agreement with theory. These photodiodes have also been used to determine the minority carrier lifetime and diffusion length in p-Hg1-xCdxTe.
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