Anisotropy-induced fluctuations in Cu(In, Ga)Se2

Abstract

The attractiveness of Cu(In,Ga)Se2 (CIGS) is still curtailed by the R&D gap that separates it from silicon. Overcoming the gap requires strategic approaches, leaving plenty of room for research in industry and lab. Yet, the progress of this technology hinges on our understanding of the diffusion phenomena that occur during and after the material growth, particularly in combination with alkali metal doping. This contribution introduces a sponge cake simplified model of atomic diffusion in CIGS, based on insights drawn from recent and older (but crucial) literature. The concept of anisotropy-induced fluctuations emerges, with the ambition to stir the community and unlock the full potential of the technology. Keywords-Alkali metal doping, PDT, atomic diffusion, texture.