Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs

S. Makino, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara
{"title":"Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs","authors":"S. Makino, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2016.7521698","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
金属电极边缘不规则性对AlGaN/GaN hemt击穿电压的影响
本文的目的是研究欧姆电极处理对AlGaN/GaN hemt击穿电压的影响。研究了提离过程中超声波清洗条件对金属边缘清晰度的影响。验证了欧姆电极的形状对于确保高击穿电压特性确实至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
IoT device oriented security module using PUF Capacitance analysis of pseudo-MOSFET using Cole-Cole plots Characteristic evaluation of Ga-Sn-O thin film by Hall measurement Potential of perovskite solar cells for power sources of IoT applications Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1