Y. Baeyens, D. Schreurs, B. Nauwelaers, K. van der Zanden, M. Van Hove, W. De Raedt, M. Van Rossum
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引用次数: 4
Abstract
This work compares the high-frequency performance of both single and dual-gate GaAs PM and InP LM HEMTs with a gatelength of 0.15 /spl mu/m. Dual-gate cascode HEMTs realised in both technologies show state-of-the-art microwave gain at 10 GHz: 24.2 dB and 27 dB for GaAs PHEMT and InP LM HEMTs respectively. Using dual-gate HEMTs, different coplanar MMIC circuits were designed and successfully realised. Two examples are presented: a GaAs PHEMT distributed amplifier with a gain-bandwidth product of 185 GHz and a small-band one-stage reactively matched amplifier having a gain of more than 20 dB at 23 GHz for both the GaAs and InP-based realisation.
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