Piezoelectric Micromachined Ultrasonic Transducers based on PZT films

B. Belgacem, F. Calame, P. Muralt
{"title":"Piezoelectric Micromachined Ultrasonic Transducers based on PZT films","authors":"B. Belgacem, F. Calame, P. Muralt","doi":"10.1109/ISAF.2006.4387898","DOIUrl":null,"url":null,"abstract":"Piezoelectric micro machined ultrasonic transducers (pMUT) are piezoelectric laminated plates operating at flexural modes. The pMUT's fabricated in this work contained a 4 mum thick lead zirconate titanate (PZT) thin film deposited by a sol-gel technique, and exhibiting a permittivity of epsiv<sub>r</sub>=1200, and an effective transverse piezoelectric coefficient e<sub>31.f</sub> of 12 C/m<sup>2</sup>. A further optimization of the sol-gel process yielded larger grain diameters and consequently improved properties: epsiv<sub>r</sub>=1600, e<sub>31.f</sub> of 16 C/m<sup>2</sup>. A design and micromachining concpet for easy scaling in frequency has been developed. The electromechanical coupling coefficient (k<sup>2</sup>) and the quality factor (Q) of rectangular clamped elements (with former PZT process) were measured as k<sup>2</sup>=4.4% and Q=145 in air for a low frequency transducer (@240 kHz). The 16.9 MHz transducer yielded values of Q=25 and k<sup>2</sup> =3% in air. The effect of DC bias voltage on frequency and k<sup>2</sup> has been studied.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 15th ieee international symposium on the applications of ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2006.4387898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

Piezoelectric micro machined ultrasonic transducers (pMUT) are piezoelectric laminated plates operating at flexural modes. The pMUT's fabricated in this work contained a 4 mum thick lead zirconate titanate (PZT) thin film deposited by a sol-gel technique, and exhibiting a permittivity of epsivr=1200, and an effective transverse piezoelectric coefficient e31.f of 12 C/m2. A further optimization of the sol-gel process yielded larger grain diameters and consequently improved properties: epsivr=1600, e31.f of 16 C/m2. A design and micromachining concpet for easy scaling in frequency has been developed. The electromechanical coupling coefficient (k2) and the quality factor (Q) of rectangular clamped elements (with former PZT process) were measured as k2=4.4% and Q=145 in air for a low frequency transducer (@240 kHz). The 16.9 MHz transducer yielded values of Q=25 and k2 =3% in air. The effect of DC bias voltage on frequency and k2 has been studied.
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基于PZT薄膜的压电微机械超声换能器
压电微机械超声换能器(pMUT)是一种工作在弯曲模式下的压电层合板。采用溶胶-凝胶法制备的pMUT包含4 μ m厚的锆钛酸铅(PZT)薄膜,其介电常数epsivr=1200,有效横向压电系数e31。f (12c /m2)溶胶-凝胶工艺的进一步优化产生了更大的颗粒直径,从而改善了性能:epsivr=1600, e31。f (16c /m2)提出了一种易于缩放频率的设计和微加工概念。对低频换能器(@240 kHz)在空气中的机电耦合系数(k2)和品质因子(Q)(采用原PZT工艺)分别为k2=4.4%和Q=145。16.9 MHz换能器在空气中产生Q=25和k2 =3%的值。研究了直流偏置电压对频率和k2的影响。
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