H. Cha, Xiaodong Chen, W. Schaff, M. Spencer, L. Eastman, B. Ridley, J. Pomeroy, M. Kuball
{"title":"Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications","authors":"H. Cha, Xiaodong Chen, W. Schaff, M. Spencer, L. Eastman, B. Ridley, J. Pomeroy, M. Kuball","doi":"10.1109/DRC.2005.1553052","DOIUrl":null,"url":null,"abstract":"In order to achieve operation at terahertz frequency, electronic devices are required to reach the highest possible transit velocity, even if this velocity is limited to a short distance. The concept of ballistic electrons in compound semiconductors was initially reported using GaAs (Shur and Eastman, 1979). In this work, progress in initial research on GaN based ballistic electron acceleration negative-differential-conductivity (BEAN) diodes for potential THz oscillator is reported along with their device concepts","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In order to achieve operation at terahertz frequency, electronic devices are required to reach the highest possible transit velocity, even if this velocity is limited to a short distance. The concept of ballistic electrons in compound semiconductors was initially reported using GaAs (Shur and Eastman, 1979). In this work, progress in initial research on GaN based ballistic electron acceleration negative-differential-conductivity (BEAN) diodes for potential THz oscillator is reported along with their device concepts
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