{"title":"Solution Processed Metal Oxide in Emerging Electronic Devices","authors":"Chun Zhao, Cezhou Zhao, T. Zhao","doi":"10.1109/asicon47005.2019.8983521","DOIUrl":null,"url":null,"abstract":"Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/asicon47005.2019.8983521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.
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