GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier

K. Kobayashi, K. Ip, A. Oki, D. Umemoto, Sahimwn Claxton, Matt Pope, Jerry Wiltz
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引用次数: 34

Abstract

The authors report on a GaAs HBT three-stage variable gain amplifier operating over a 0.75-5 GHz frequency band. The amplifier is broken up into a single-ended HBT LNA pre-amp, an analog current steering differential cascode cell for variable gain control, and a differential amplifier output stage. The pre-amp is required to reduce the inherently noisy differential cascode stage, and an output differential amplifier is used for drive capability and differential to single-ended conversion. The VGA has a maximum gain of 23.8 dB, an IP3 >18 dBm, and a noise figure of 6.5 dB. The variable gain control range is >35 dB. This chip demonstrates the versatility of HBT IC technology which can integrate digital, analog, and microwave circuit functions to achieve high performance in a single monolithic chip.<>
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GaAs HBT 0.75-5 GHz多功能微波模拟变增益放大器
作者报道了一种工作在0.75- 5ghz频段的GaAs HBT三级可变增益放大器。该放大器分为单端HBT LNA前置放大器、用于可变增益控制的模拟电流转向差分级联编码单元和差分放大器输出级。需要前置放大器来降低差分级联的固有噪声,输出差分放大器用于驱动能力和差分到单端转换。VGA的最大增益为23.8 dB, IP3 >18 dBm,噪声系数为6.5 dB。可变增益控制范围> 35db。该芯片展示了HBT集成电路技术的多功能性,它可以将数字、模拟和微波电路功能集成在一个单片芯片上,从而实现高性能。
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