High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies

Edon Derguti, E. Ture, S. Krause, D. Schwantuschke, R. Quay, O. Ambacher
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Abstract

In this paper the design and realization of an asymmetrical three-way (1:1:1) GaN Doherty power amplifier (DPA) operating at a center frequency of 5.4 GHz is presented. The DPA is constructed from three packaged power bars, each consisting of four GaN HEMT cells (8 fingers, 300 μm unit gate width) in 0.25 μm gate length. Performance of the realized DPA prototype is analyzed under pulsed-RF excitation ($20\mu \mathrm{s}$ pulse width, 10 % duty cycle) at 40 V DC drain supply voltage. The measurement results yield 48.5 dBm maximum output power, with a maximum PAE of 46 %. At 6 dB output power back-off (OPBO) the DPA demonstrates 40 % PAE whereas 35 % PAE is achieved at 9 dB OPBO.
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c波段高功率非对称三向GaN多尔蒂功率放大器
本文设计并实现了一种工作在5.4 GHz中心频率的非对称三路(1:1:1)GaN Doherty功率放大器(DPA)。DPA由三个封装的电源棒组成,每个电源棒由四个GaN HEMT电池(8指,300 μm单位栅极宽度)组成,栅极长度为0.25 μm。在40 V直流漏极电源电压下,分析了所实现的DPA样机在脉冲射频激励(脉冲宽度为$20\mu \ mathm {s}$,占空比为10%)下的性能。测量结果显示,最大输出功率为48.5 dBm,最大PAE为46%。在6 dB输出功率回退(OPBO)时,DPA显示40%的PAE,而在9 dB OPBO时实现35%的PAE。
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