M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi
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引用次数: 4
Abstract
We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.
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