Electronic Structure of CdS Nanoparticles and CdSe/CdS Nanosystems

V. Zavodinsky, O. Gorkusha, A. Kuz’menko
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Abstract

The electronic states of “wurtzite” CdS nanoparticles and CdSe/CdS nanosystems with up to 80 pairs of Cd-Se or CdS atoms were calculated.The results for CdS particles were compared with the results obtained earlier for CdSe particles of the same size and with published calculations of other authors. The calculated gap values in the range of 2.84 eV ~ 3.78 eV are typical for CdS particles of studied sizes in accordance with results of published data. The CdSe/CdS nanosystems were considered as layered ones and as quantum dots. The layered CdSe/CdS systems with twolayer CdS coverings can be interpreted in terms of combinations of two semiconductors with different energy band gaps (2.6 eV and 3.3 eV), while analogous systems with single-layer CdS coverings do not demonstrate a two-gap electron structure. Simulation of a CdSe/CdS quantum dot shows that the single-layer CdS shell demonstrates a tendency for the formation of the electronic structure with two energy gaps: approximately of 2.5 eV and 3.0 eV.
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CdS纳米粒子和CdSe/CdS纳米体系的电子结构
计算了含有80对Cd-Se或CdS原子的“纤锌矿”CdS纳米粒子和CdSe/CdS纳米体系的电子态。将CdS粒子的结果与先前获得的相同大小的CdSe粒子的结果以及其他作者发表的计算结果进行了比较。计算得到的间隙值在2.84 eV ~ 3.78 eV范围内,与已发表的数据一致。CdSe/CdS纳米系统被认为是层状的和量子点。具有两层CdS覆盖层的CdSe/CdS系统可以被解释为具有不同能带隙(2.6 eV和3.3 eV)的两种半导体的组合,而具有单层CdS覆盖层的类似系统则不表现出两层隙电子结构。对CdSe/CdS量子点的模拟表明,单层CdS壳层倾向于形成具有两个能隙的电子结构:大约2.5 eV和3.0 eV。
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