Atomic Diffusion Bonding using Y2O3 and ZrO2 films

T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto
{"title":"Atomic Diffusion Bonding using Y2O3 and ZrO2 films","authors":"T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto","doi":"10.1109/LTB-3D53950.2021.9598449","DOIUrl":null,"url":null,"abstract":"We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y<inf>2</inf>O<inf>3</inf> and ZrO<inf>2</inf> films. Results showed that bonded interface disappeared perfectly (Y<inf>2</inf>O<inf>3</inf> films) or partially (ZrO<inf>2</inf> film) at room temperature, implying high bonding potential using these oxide films in ADB.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598449","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y2O3 and ZrO2 films. Results showed that bonded interface disappeared perfectly (Y2O3 films) or partially (ZrO2 film) at room temperature, implying high bonding potential using these oxide films in ADB.
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Y2O3和ZrO2薄膜的原子扩散键合
我们展示了室温下使用Y2O3和ZrO2薄膜的晶圆原子扩散键合(ADB)。结果表明,在室温下,结合界面完全消失(Y2O3薄膜)或部分消失(ZrO2薄膜),表明这些氧化膜在ADB中具有很高的结合潜力。
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