Hot electron reliability and ESD latent damage

S. Aur, Amitava Chatterjee, T. Polgreen
{"title":"Hot electron reliability and ESD latent damage","authors":"S. Aur, Amitava Chatterjee, T. Polgreen","doi":"10.1109/RELPHY.1988.23418","DOIUrl":null,"url":null,"abstract":"The authors present a study of the impact of noncatastrophic electrostatic-discharge (ESD) stress on hot-electron reliability as well as the effect of hot electron (HE) injection on ESD protection threshold. It is found that there is a factor of two to four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar in that HE is a low-current long-time process and ESD is a high-current short-time process. Therefore the techniques for characterizing hot-electron degradation have been applied to quantify damage due to ESD stress. This technique shows electrical evidence of current filaments during an ESD.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"69","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th Annual Proceedings Reliability Physics Symposium 1988","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1988.23418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 69

Abstract

The authors present a study of the impact of noncatastrophic electrostatic-discharge (ESD) stress on hot-electron reliability as well as the effect of hot electron (HE) injection on ESD protection threshold. It is found that there is a factor of two to four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar in that HE is a low-current long-time process and ESD is a high-current short-time process. Therefore the techniques for characterizing hot-electron degradation have been applied to quantify damage due to ESD stress. This technique shows electrical evidence of current filaments during an ESD.<>
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热电子可靠性与ESD潜在损伤
本文研究了非灾难性静电放电(ESD)应力对热电子可靠性的影响以及热电子注入对ESD保护阈值的影响。结果表明,在低强度静电放电后,热电子的可靠性有2 ~ 4倍的下降。这两种效应可以看作是相似的,HE是一个小电流的长时间过程,而ESD是一个大电流的短时间过程。因此,表征热电子降解的技术已被应用于量化由ESD应力引起的损伤。该技术显示ESD过程中电流细丝的电气证据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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