Hyungwoo Ko, Jongsu Kim, Dokyun Son, Myounggon Kang, Hyungcheol Shin
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引用次数: 1
Abstract
In this paper, the dual-k spacer of nanowire-FET is investigated using a variety of materials compared with single spacer. The proposed structure shows significant improvement of delay characteristics and better electrostatic controllability than those of single spacer.
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