T. Nicoletti, S. Santos, K. Sasaki, J. Martino, M. Aoulaiche, E. Simoen, C. Claeys
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引用次数: 2
Abstract
The dependence of the activation energy on the electric field is investigated in extensionless (underlap) UTBOX FDSOI applied as a single transistor floating body RAM. It was found that with the same gate stack it is possible to extract two different activation energies when the electric field in the hold condition is different. Higher barrier lowering induced by elevated electric field implies in higher energy trap level. The dominant mechanism behind this dependence is identified and attributed to Poole-Frenkel effect.
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