Consistent Modeling of Snapback Phenomenon Based on Conventional I-V Measurements

Abstract

The snapback phenomenon is investigated with use of 2D-device simulations. It is found that the phenomenon is induced by three sequentially occurring mechanisms: 1. Impact ionization, 2. Potential increase, and 3. Bipolar effect. Further, it is demonstrated that this series of mechanisms can be successfully modeled with use of the compact model HiSIM\_HV by introducing an internal node within the substrate, which is solved in a consistent way. The node is verified to describe the new induced electrical balance correctly. It is demonstrated that the node potential change is the origin of the three involved mechanisms. The reason for the achieved simple but accurate modeling is mainly related to the potential-based modeling approach of HiSIM_HV adopted for the basic I - V modeling, which is influenced by the internal node potential as well.