Numerical modeling of device structure for FeS2 thin film solar cells

S. Uchiyama, Y. Ishikawa, Y. Kawamura, Y. Uraoka
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引用次数: 3

Abstract

This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable band gap of FeS2 was necessary.
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FeS2薄膜太阳能电池器件结构的数值模拟
本文通过器件仿真对FeS2薄膜太阳能电池进行了器件建模,从器件结构上探讨了0%转换效率的原因。我们证明了所报道的器件没有形成一个合适的光伏器件结构。为了实现FeS2光伏器件,我们建议不仅要获得合适的能带结构,而且要获得合适的FeS2带隙。
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