{"title":"Numerical modeling of device structure for FeS2 thin film solar cells","authors":"S. Uchiyama, Y. Ishikawa, Y. Kawamura, Y. Uraoka","doi":"10.1109/AM-FPD.2016.7543671","DOIUrl":null,"url":null,"abstract":"This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable band gap of FeS2 was necessary.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable band gap of FeS2 was necessary.