{"title":"Deep traps and brightness degradation for oxygen-rich concentration in ZnS:TbOF thin film electroluminescent devices","authors":"C.W. Wang, T. Sheu, Y. Su, M. Yokoyama","doi":"10.1109/SMICND.1996.557412","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to study the relationship between the oxygen-rich concentration and brightness degradation in ZnS:TbOF green A.C. thin-film electroluminescent devices. The results showed that higher oxygen-content (O/Tb>1) in the phosphor layer not only created the deep hole traps (E/sub t1/ and/or E/sub t2/) but also yielded the EL devices with moisture. As a result, lower brightness was obtained.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557412","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The purpose of this work is to study the relationship between the oxygen-rich concentration and brightness degradation in ZnS:TbOF green A.C. thin-film electroluminescent devices. The results showed that higher oxygen-content (O/Tb>1) in the phosphor layer not only created the deep hole traps (E/sub t1/ and/or E/sub t2/) but also yielded the EL devices with moisture. As a result, lower brightness was obtained.
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