Q. Ouyang, Xiangdong Chen, A. Tasch, L. Register, S. Banerjee, J. Chu, J. Ott
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引用次数: 2
Abstract
We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), also called the high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJT has a 1.65/spl times/ higher drive current (V/sub DS/=-1.6 V and V/sub G/-V/sub T/=-2 V), and a 70/spl times/ lower off-state leakage (V/sub DS/=-1.6 V).
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