{"title":"A new CMOS structure for low temperature operation with forward substrate bias","authors":"T. Yamamoto, T. Mogami, K. Terada","doi":"10.1109/VLSIT.1992.200670","DOIUrl":null,"url":null,"abstract":"A CMOS structure with a local well contact that allows the application of forward substrate bias for both p- and n-well with a single substrate supply is described. Higher driving capability and smaller short channel effects can be realized without device area increase. A propagation delay of 95 ps/stage at V/sub dd/=1.5 V and a temperature of 77 K was obtained with a 0.4- mu m gate length, which is about 1.5 times faster than that of the conventional CMOS structure.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A CMOS structure with a local well contact that allows the application of forward substrate bias for both p- and n-well with a single substrate supply is described. Higher driving capability and smaller short channel effects can be realized without device area increase. A propagation delay of 95 ps/stage at V/sub dd/=1.5 V and a temperature of 77 K was obtained with a 0.4- mu m gate length, which is about 1.5 times faster than that of the conventional CMOS structure.<>
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