Analysis and a Reduction Method of Temporal Noise in the CMOS Image Sensor Readout Chain

Jingwei Wei, Dongmei Li, Jingxuan Qiao, Lixin Zhao
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Abstract

This paper analyzes temporal noise in the CMOS image sensor readout chain. The impact of column capacitors on input-referred noise is discussed as the column capacitors make a major contribution to the area of column circuits. Based on the analysis, a new low-noise design method for CMOS image sensors of cellphones is proposed. By implementing MOM capacitors in the pixel array, the area of column readout circuits is effectively reduced.
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CMOS图像传感器读出链中时间噪声的分析与降低方法
本文分析了CMOS图像传感器读出链中的时间噪声。讨论了列电容对输入参考噪声的影响,因为列电容对列电路的面积有很大的贡献。在此基础上,提出了一种新的手机CMOS图像传感器的低噪声设计方法。通过在像素阵列中采用MOM电容,有效地减小了列读出电路的面积。
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