M. Biedenbender, J. Lee, K. Tan, P. Liu, A. Freudenthal, D. Streit, G. Luong, R. Lai, M. Aust, B. Allen, T. Lin, H. Yen
{"title":"A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers","authors":"M. Biedenbender, J. Lee, K. Tan, P. Liu, A. Freudenthal, D. Streit, G. Luong, R. Lai, M. Aust, B. Allen, T. Lin, H. Yen","doi":"10.1109/GAAS.1993.394438","DOIUrl":null,"url":null,"abstract":"The authors have developed a reproducible, high yield and high performance power HEMT Ka-band MMIC production process based on pseudomorphic AlGaAs/InGaAs/GaAs HEMTs. The details of the fabrication process and Ka-band MMIC power amplifier performance from 60 wafers are presented. State-of-the-art power performance have been achieved on both devices and MMICs. Single-stage MMICs with 400 /spl mu/m devices have demonstrated output power of 240 mW (0.6 W/mm) at 37 GHz with a power gain of 7.8 dB and power-added efficiency of 40%. The Ka-band MMIC power amplifiers have demonstrated output power of 1.3 W, 9 dB gain and 24% power added efficiency. Furthermore, the power MMIC HEMT process demonstrated a RF MMIC circuit yield of 25.8% for a total of 6936 possible chips from 60 wafers.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
The authors have developed a reproducible, high yield and high performance power HEMT Ka-band MMIC production process based on pseudomorphic AlGaAs/InGaAs/GaAs HEMTs. The details of the fabrication process and Ka-band MMIC power amplifier performance from 60 wafers are presented. State-of-the-art power performance have been achieved on both devices and MMICs. Single-stage MMICs with 400 /spl mu/m devices have demonstrated output power of 240 mW (0.6 W/mm) at 37 GHz with a power gain of 7.8 dB and power-added efficiency of 40%. The Ka-band MMIC power amplifiers have demonstrated output power of 1.3 W, 9 dB gain and 24% power added efficiency. Furthermore, the power MMIC HEMT process demonstrated a RF MMIC circuit yield of 25.8% for a total of 6936 possible chips from 60 wafers.<>
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