Accurate small-signal model and its parameter extraction in RF silicon MOSFETs

Abstract

An accurate method to extract a small signal equivalent circuit model of RF silicon MOSFETs is presented. Analytical calculations are used for each intrinsic parameter and accuracy is within 1% for the entire operational region. 2D physical device simulation is used to analyze this methodology. A simple non-quasi static (NQS) model is reported, which offers good accuracy needed for circuit simulation, including a simple network representing the coupling between source and drain. Accurate extraction methods for extrinsic parameters have been also developed. The compact model and its parameter extraction are verified on Si-MOSFETs through S-parameter measurements.