Modelling heating effects due to current crowding in ZnO nanowires with end-bonded metal contacts

Abstract

A full 3D model for the simulation of carrier transport, self-consistently coupled with thermal transport, has been developed for free-standing ZnO nanowires with Schottky contacts. The model predicts a complex distribution of the current density through the metal-semiconductor interface with a high current density area around the edge of the Schottky contact away from the contact centre. This high current density would result in increased Joule heating at the contact edge of the free standing ZnO nanowire leading to local temperature breakdown at the contact. Degradation with increasing temperature was also demonstrated.