T. Miida, K. Kawajiri, H. Terakago, T. Endo, T. Okazaki, S. Yamamoto, A. Nishimura
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引用次数: 7
Abstract
A 1.5 Mpixel imager with 4.2 /spl mu/m square pixel is composed of a single MOSFET and a pinned photodiode. A localized high-density p-region near the source of the MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color reproduction and resolution are achieved.
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